Tunable X band GaAs F.E.T. amplifier

Details Tunable X band GaAs F.E.T. amplifier Tunable X band GaAs F.E.T. amplifier

Sep 1975

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=1975ell....11..474s&link_type=abstract

Electronics Letters, vol. 11, Sept. 18, 1975, p. 474, 475. Research supported by the Ministry of Defence (Procurement Executive

Physics

Amplifier Design, Field Effect Transistors, Gallium Arsenides, Microwave Amplifiers, Tuning, Frequency Control, Impedance Matching, Noise Intensity, Power Gain, Schottky Diodes, Superhigh Frequencies

Scientific paper

The design of a frequency-tunable X band amplifier using GaAs Schottky field-effect transistors is described. By using a broadband input matching circuit and a frequency-tunable output matching circuit, the gain of 7 + or - 0.5 dB obtained from a single-stage amplifier may be varied from 8 to 10 GHz, with corresponding terminal VSWR, over any 600 MHz bandwidth, better than 2:1. A single-stage amplifier gives a noise figure of 4.7 dB with a gain of 5.8 dB, and a two-stage amplifier a 6.0 dB noise figure with 12.5 dB power gain.

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