Application of finite element methods to the simulation of semiconductor devices

Details Application of finite element methods to the simulation of semiconductor devices Application of finite element methods to the simulation of semiconductor devices

Mar 1999

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=1999rpph...62..277m&link_type=abstract

Reports on Progress in Physics, Volume 62, Issue 3, pp. 277-353 (1999).

Physics

2

Scientific paper

In this paper a survey is presented of the use of finite element methods for the simulation of the behaviour of semiconductor devices. Both ordinary and mixed finite element methods are considered. We indicate how the various mathematical models of semiconductor device behaviour can be obtained from the Boltzmann transport equation and the appropriate closing relations. The drift-diffusion and hydrodynamic models are discussed in more detail. Some mathematical properties of the resulting nonlinear systems of partial differential equations are identified, and general considerations regarding their numerical approximations are discussed. Ordinary finite element methods of standard and non-standard type are introduced by means of one-dimensional illustrative examples. Both types of finite element method are then extended to two-dimensional problems and some practical issues regarding the corresponding discrete linear systems are discussed. The possibility of using special non-uniform fitted meshes is noted. Mixed finite element methods of standard and non-standard type are described for both one- and two-dimensional problems. The coefficient matrices of the linear systems corresponding to some methods of non-standard type are monotone. Ordinary and mixed finite element methods of both types are applied to the equations of the stationary drift-diffusion model in two dimensions. Some promising directions for future research are described.

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