Effect of ƒO2 on SiC Volatilization Rate

Details Effect of ƒO2 on SiC Volatilization Rate Effect of ƒO2 on SiC Volatilization Rate

Mar 1999

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=1999lpi....30.1990m&link_type=abstract

30th Annual Lunar and Planetary Science Conference, March 15-29, 1999, Houston, TX, abstract no. 1990

Computer Science

1

Scientific paper

The rate of SiC volatilization has been measured in H2-CO2 with log
f(O2) from IW-3 to IW-10. The results show that possible variations in
the composition of a nebular gas do not increase lifetimes of
interstellar SiC grains reported previously (several months at 1200oC).

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