ZnO doping by ion implantation

Details ZnO doping by ion implantation ZnO doping by ion implantation

Aug 2005

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=2005spie.5922..178h&link_type=abstract

Hard X-Ray and Gamma-Ray Detector Physics VII. Edited by James, Ralph B.; Franks, Larry A.; Burger, Arnold. Proceedings of the

Physics

Scientific paper

Preliminary studies on ZnO single crystals implanted with In (donor), As (acceptor) and 111Ag (acceptor) are presented. Each dopants electronic structure was investigated by means of positron annihilation lifetime (PALS) and photoluminescence (PL) measurements. For some of the crystals, the lifetime spectra revealed the presence of effective positron traps. Moreover, for all samples the luminescence spectra consist of a near-band-edge (NBE) and a deep-level (DL) emission. The observed trends will be discussed in terms of the origin, nature and charge state of the induced defects involved.

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