Physics
Scientific paper
Jun 2001
adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=2001spie.4425..351k&link_type=abstract
Proc. SPIE Vol. 4425, p. 351-356, Selected Papers from the International Conference on Optoelectronic Information Technologies,
Physics
Scientific paper
This work is dedicated to investigation of the processes of obtaining thin single crystalline layers of storage phosphors based on KBr and KCl by means of diffusive methods with the aim of their possible application as spatial resolution image plates for digital radiography systems. The activator diffusion coefficient and its distribution along the thickness of the diffusive structure (DS) have been determined. The factors, which affect -- the structural perfection and DS optical quality have been analyzed. The peculiarities of photostimulate luminescence (PSL) processes in DS based on KBr and KCl doped with In and Tl ions, prepared at different temperatures of the diffusive process have been considered. It has been shown that PSL of DS KBr:Tl,In obtained at 600 - 650 degrees Celsius consists in the radiative recombination of electrons on the hole centers formed by cationic vacancies, whereas in the DS prepared at Tdif> 700 degrees Celsius the recombination on the Tl and In activator centers is predominant.
Batentschuk M.
Konstankevych Ivan V.
Pashkovsky M.
Zorenko Yuri V.
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