Silicate bonding properties: Investigation through thermal conductivity measurements

Details Silicate bonding properties: Investigation through thermal conductivity measurements Silicate bonding properties: Investigation through thermal conductivity measurements

May 2010

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=2010jphcs.228a2019l&link_type=abstract

Journal of Physics: Conference Series, Volume 228, Issue 1, pp. 012019 (2010).

Physics

1

Scientific paper

A direct approach to reduce the thermal noise contribution to the sensitivity limit of a GW interferometric detector is the cryogenic cooling of the mirrors and mirrors suspensions. Future generations of detectors are foreseen to implement this solution. Silicon has been proposed as a candidate material, thanks to its very low intrinsic loss angle at low temperatures and due to its very high thermal conductivity, allowing the heat deposited in the mirrors by high power lasers to be efficiently extracted. To accomplish such a scheme, both mirror masses and suspension elements must be made of silicon, then bonded together forming a quasi-monolithic stage. Elements can be assembled using hydroxide-catalysis silicate bonding, as for silica monolithic joints. The effect of Si to Si bonding on suspension thermal conductance has therefore to be experimentally studied. A measurement of the effect of silicate bonding on thermal conductance carried out on 1 inch thick silicon bonded samples, from room temperature down to 77 K, is reported. In the explored temperature range, the silicate bonding does not seem to affect in a relevant way the sample conductance.

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