On the Origin of Titanium-49 Excesses in Presolar Silicon Carbide Grains of Type X

Details On the Origin of Titanium-49 Excesses in Presolar Silicon Carbide Grains of Type X On the Origin of Titanium-49 Excesses in Presolar Silicon Carbide Grains of Type X

Mar 2002

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=2002lpi....33.1310h&link_type=abstract

33rd Annual Lunar and Planetary Science Conference, March 11-15, 2002, Houston, Texas, abstract no.1310

Physics

1

Scientific paper

The Ti-V isotopic systematics was investigated on 48 presolar SiC grains
of type X. A correlation between Ti 49/48Ti ratios
and V/Ti ratios suggests grain formation on a time-scale of several
months.

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