Far-infrared photoconductivity of uniaxially stressed germanium

Details Far-infrared photoconductivity of uniaxially stressed germanium Far-infrared photoconductivity of uniaxially stressed germanium

Oct 1977

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=1977apphl..31..496k&link_type=abstract

Applied Physics Letters, vol. 31, Oct. 15, 1977, p. 496, 497. ERDA-supported research.

Physics

Optics

20

Axial Stress, Far Infrared Radiation, Germanium, Infrared Detectors, Photoconductivity, Crystal Optics, Electric Fields, Gallium

Scientific paper

The experiments described were carried out to study the influence of uniaxial stress on the impurity photoionization of gallium-doped germanium. The specimens used were doped with gallium at concentrations of 2 by 10 to the 14th power cu cm and a compensation of less than 0.01. Diagrams showing the responsivity of uniaxially stressed germanium for various values of stress; the stress dependence of the photoconductivity threshold and the conductance of the sample; and the dependence of the resistance of the sample and the peak responsivity (at 190 microns) on the electric field are presented and discussed.

Affiliated with

Also associated with

No associations

Rating

Far-infrared photoconductivity of uniaxially stressed germanium does not yet have a rating. At this time, there are no reviews or comments for this scientific paper.

If you have personal experience with Far-infrared photoconductivity of uniaxially stressed germanium, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Far-infrared photoconductivity of uniaxially stressed germanium will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFWR-SCP-O-745579