Atom Nano-lithography with Multi-layer Light Masks: Particle Optics Analysis

Details Atom Nano-lithography with Multi-layer Light Masks: Particle Optics Analysis Atom Nano-lithography with Multi-layer Light Masks: Particle Optics Analysis

2005-03-22

arxiv.org/abs/quant-ph/0503181v1

Phys. Rev. A 72, 023417 (2005).

Physics

Quantum Physics

7 pages including 8 figures in Revtex

Scientific paper

10.1103/PhysRevA.72.023417

We study the focusing of atoms by multiple layers of standing light waves in the context of atom lithography. In particular, atomic localization by a double-layer light mask is examined using the optimal squeezing approach. Operation of the focusing setup is analyzed both in the paraxial approximation and in the regime of nonlinear spatial squeezing for the thin-thin as well as thin-thick atom lens combinations. It is shown that the optimized double light mask may considerably reduce the imaging problems, improve the quality of focusing and enhance the contrast ratio of the deposited structures.

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