Rigorous Simulations of 3D Patterns on Extreme Ultraviolet Lithography Masks

Details Rigorous Simulations of 3D Patterns on Extreme Ultraviolet Lithography Masks Rigorous Simulations of 3D Patterns on Extreme Ultraviolet Lithography Masks

2011-05-30

arxiv.org/abs/1105.6052v1

Proc. SPIE Vol. 8083 (2011) 80831B (Modeling Aspects in Optical Metrology III)

Physics

Optics

SPIE Europe Optical Metrology, Conference Proceedings

Scientific paper

10.1117/12.889831

Simulations of light scattering off an extreme ultraviolet lithography mask
with a 2D-periodic absorber pattern are presented. In a detailed convergence
study it is shown that accurate results can be attained for relatively large 3D
computational domains and in the presence of sidewall-angles and
corner-roundings.

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