The ultra-sensitive electrical detection of spin Rabi oscillation at paramagnetic defects

Details The ultra-sensitive electrical detection of spin Rabi oscillation at paramagnetic defects The ultra-sensitive electrical detection of spin Rabi oscillation at paramagnetic defects

2005-09-18

arxiv.org/abs/quant-ph/0509120v1

Physics

Quantum Physics

The manuscript has been submitted for journal publication

Scientific paper

10.1016/j.physb.2005.12.231

A short review of the pulsed electrically detected magnetic resonance (pEDMR) experiment is presented. PEDMR allows the highly sensitive observation of coherent electron spin motion of charge carriers and defects in semiconductors by means of transient current measurements. The theoretical foundations, the experimental implementation, its sensitivity and its potential with regard to the investigation of electronic transitions in semiconductors are discussed. For the example of the P_b center at the crystalline silicon (111) to silicon dioxide interface it is shown experimentally how one can detect spin Rabi-oscillation, its dephasing, coherence decays and spin-coupling effects.

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