Visible light emitting devices with Schottky contacts on silicon nanocrystals

Details Visible light emitting devices with Schottky contacts on silicon nanocrystals Visible light emitting devices with Schottky contacts on silicon nanocrystals

1998-05-12

arxiv.org/abs/physics/9805015v1

Physics

Optics

9 pages, 4 figures(mail if you need), use revtex.sty

Scientific paper

We have fabricated light emitting diodes (LEDs) with Schottky contacts on Si-nanocrystals formed by simple techniques as used for standard Si devices. Orange electroluminescence (EL) from these LEDs could be seen with the naked eye at room temperature when a reverse bias voltage was applied. The EL spectrum has a major peak with a photon energy of 1.9 eV and a minor peak with a photon energy of 2.2 eV. Since the electrons and holes are injected into the radiative recombination centers related to nanocrystals through avalanche breakdown, the voltage needed for a visible light emission is reduced to 4.0 - 4.5 V, which is low enough to be applied by a standard Si transistor.

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