Quantum gates by coupled quantum dots and measurement procedure in Si MOSFET

Details Quantum gates by coupled quantum dots and measurement procedure in Si MOSFET Quantum gates by coupled quantum dots and measurement procedure in Si MOSFET

1999-08-05

arxiv.org/abs/quant-ph/9908021v1

Physica B 272 (1999) 45

Physics

Quantum Physics

3 pages, 2 figures, use revtex.sty. 'The Eleventh International Conference on Nonequilibrium Carrier Dynamics in Semiconductor

Scientific paper

10.1016/S0921-4526(99)00344-0

We investigated the quantum gates of coupled quantum dots, theoretically,
when charging effects can be observed. We have shown that the charged states in
the qubits can be observed by the channel current of the MOSFET structure.

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