Single-spin readout for buried dopant semiconductor qubits

Details Single-spin readout for buried dopant semiconductor qubits Single-spin readout for buried dopant semiconductor qubits

2004-02-11

arxiv.org/abs/quant-ph/0402077v1

Physical Review B 69, 233301 (2004)

Physics

Quantum Physics

12 pages, 5 figures, 1 table

Scientific paper

10.1103/PhysRevB.69.233301

In the design of quantum computer architectures that take advantage of the long coherence times of dopant nuclear and electron spins in the solid-state, single-spin detection for readout remains a crucial unsolved problem. Schemes based on adiabatically induced spin-dependent electron tunnelling between individual donor atoms, detected using a single electron transistor (SET) as an ultra-sensitive electrometer, are thought to be problematic because of the low ionisaton energy of the final D- state. In this paper we analyse the adiabatic scheme in detail. We find that despite significant stabilization due to the presence of the D+, the field strengths required for the transition lead to a shortened dwell-time placing severe constraints on the SET measurement time. We therefore investigate a new method based on resonant electron transfer, which operates with much reduced field strengths. Various issues in the implementation of this method are also discussed.

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