A New Embedded Measurement Structure for eDRAM Capacitor

Details A New Embedded Measurement Structure for eDRAM Capacitor A New Embedded Measurement Structure for eDRAM Capacitor

2007-10-25

arxiv.org/abs/0710.4736v1

Dans Design, Automation and Test in Europe - DATE'05, Munich : Allemagne (2005)

Computer Science

Hardware Architecture

Submitted on behalf of EDAA (http://www.edaa.com/)

Scientific paper

The embedded DRAM (eDRAM) is more and more used in System On Chip (SOC). The integration of the DRAM capacitor process into a logic process is challenging to get satisfactory yields. The specific process of DRAM capacitor and the low capacitance value (~30F) of this device induce problems of process monitoring and failure analysis. We propose a new test structure to measure the capacitance value of each DRAM cell capacitor in a DRAM array. This concept has been validated by simulation on a 0.18$\mu$m eDRAM technology.

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