Monolithic Pixel Sensors in Deep-Submicron SOI Technology

Details Monolithic Pixel Sensors in Deep-Submicron SOI Technology Monolithic Pixel Sensors in Deep-Submicron SOI Technology

2009-03-18

arxiv.org/abs/0903.3205v1

JINST 4:P04007,2009

Physics

Instrumentation and Detectors

Proceedings of the PIXEL 2008 International Workshop, FNAL, Batavia, IL, 23-26 September 2008. Submitted to JINST - Journal of

Scientific paper

10.1088/1748-0221/4/04/P04007

Monolithic pixel sensors for charged particle detection and imaging applications have been designed and fabricated using commercially available, deep-submicron Silicon-On-Insulator (SOI) processes, which insulate a thin layer of integrated full CMOS electronics from a high-resistivity substrate by means of a buried oxide. The substrate is contacted from the electronics layer through vias etched in the buried oxide, allowing pixel implanting and reverse biasing. This paper summarizes the performances achieved with a first prototype manufactured in the OKI 0.15 micrometer FD-SOI process, featuring analog and digital pixels on a 10 micrometer pitch. The design and preliminary results on the analog section of a second prototype manufactured in the OKI 0.20 micrometer FD-SOI process are briefly discussed.

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