Contribution of drifting carriers to the Casimir-Lifshitz and Casimir-Polder interactions with semiconductor materials

Details Contribution of drifting carriers to the Casimir-Lifshitz and Casimir-Polder interactions with semiconductor materials Contribution of drifting carriers to the Casimir-Lifshitz and Casimir-Polder interactions with semiconductor materials

2008-05-12

arxiv.org/abs/0805.1676v4

Phys. Rev. Lett. 101, 163203 (2008)

Physics

Quantum Physics

4 pages version 2: improved discussion of perfect conductor and perfect dielectric limits. Version 3; includes discussion of l

Scientific paper

10.1103/PhysRevLett.101.163203

We develop a new theory for Casimir-Lifshitz and Casimir-Polder interactions with semiconductor surfaces that takes into account charge drift in the bulk material. The corresponding frequency-dependent dispersion relations describe a crossover between Lifshitz results for dielectrics and for good conductors. In the quasi-static limit, our calculated reflection amplitudes coincide with those recently computed to account for Debye screening in the thermal Lifshitz force with conducting surfaces with small density of carriers.

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