Lindhard Factors and Concentrations of Primary Defects in Semiconductor Materials for uses in HEP

Details Lindhard Factors and Concentrations of Primary Defects in Semiconductor Materials for uses in HEP Lindhard Factors and Concentrations of Primary Defects in Semiconductor Materials for uses in HEP

2003-01-13

arxiv.org/abs/hep-ph/0301080v1

Physics

High Energy Physics

High Energy Physics - Phenomenology

8 pages

Scientific paper

This report is a compilation of authors' calculations of the Lindhard
factors, and of the concentration of primary radiation defects per unit
particle fluence in different materials for HEP uses.

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