Tapered semiconductor amplifiers for optical frequency combs in the near infrared

Details Tapered semiconductor amplifiers for optical frequency combs in the near infrared Tapered semiconductor amplifiers for optical frequency combs in the near infrared

2006-02-15

arxiv.org/abs/physics/0602104v1

Physics

Optics

3 pages, 4 figures, to appear in Optics Letters

Scientific paper

10.1364/OL.31.001337

A tapered semiconductor amplifier is injection seeded by a femtosecond optical frequency comb at 780 nm from a mode-locked Ti:sapphire laser. Energy gains over 17 dB (12 dB) are obtained for 1 mW (20 mW) of average input power when the input pulses are stretched into the picosecond range. A spectral window of supercontinuum light generated in a photonic fiber has also been amplified. Interferometric measurements show sub-hertz linewidths for a heterodyne beat between the input and amplified comb components, yielding no detectable phase-noise degradation under amplification. These amplifiers can be used to boost the infrared power in f-to-2f interferometers used to determine the carrier-to-envelope offset frequency, with clear advantages for stabilization of octave-spanning femtosecond lasers and other supercontinuum light sources with very limited power in the infrared.

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