Electrical properties of Zn/x/Hg/1-x/Te thin films

Physics

Scientific paper

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Electrical Properties, Mercury Tellurides, Semiconductors (Materials), Thin Films, Zinc Tellurides, Band Structure Of Solids, Hall Effect, Seebeck Effect

Scientific paper

Electrical measurements are reported for thin films of Zn(x)Hg(1-x)Te that were produced in a conventional vacuum system by coevaporating ZnTe and HgTe. X-ray powder photographs indicate that such films are single-phase, polycrystalline, and of the zinc-blende cubic structure. All films with x between 0 and 0.11 are found to exhibit Hall mobilities of less than 1000 sq cm/V/sec; annealing in argon increased the value by a factor of at least 6, and subsequent annealing in mercury vapor increased it further by a factor of at least 2. The film with the highest mobility was a 5% Zn alloy with a value of 9200 sq cm/V/sec at 300 K. The Hall coefficient of all the films is shown to be negative between 77 and 300 K and to be in fairly good agreement with theoretical predictions for a Cd(x)Hg(1-x)Te-type band structure. Positive Seebeck coefficients were measured for alloys containing more than 6% Zn.

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