Thick and large area PIN diodes for hard X-ray astronomy

Details Thick and large area PIN diodes for hard X-ray astronomy Thick and large area PIN diodes for hard X-ray astronomy

Oct 1999

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=1999nimpa.436..291o&link_type=abstract

Nuclear Instruments and Methods in Physics Research Section A, Volume 436, Issue 1-2, p. 291-296.

Physics

5

Scientific paper

Thick and large area PIN diodes for the hard X-ray astronomy in the 10-60 keV range are developed. To cover this energy range in a room temperature and in a low background environment, Si PIN junction diodes of 2 mm in thickness with 2.5 cm2 in effective area were developed, and will be used in the bottom of the Phoswich Hard X-ray Detector (HXD), on-board the ASTRO-E satellite. Problems related to a high purity Si and a thick depletion layer during our development and performance of the PIN diodes are presented in detail.

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