Physics
Scientific paper
Aug 2008
adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=2008njph...10h5007w&link_type=abstract
New Journal of Physics, Volume 10, Issue 8, pp. 085007 (2008).
Physics
2
Scientific paper
We investigate the anisotropy of magnetic reversal and current-driven domain wall motion in annealed Ga0.95Mn0.05As thin films and Hall bar devices with perpendicular magnetic anisotropy. Hall bars with current direction along the [110] and [1\bar{1}0] crystallographic axes are studied. The [110] device shows larger coercive field than the [1\bar{1}0] device. Strong anisotropy is observed during magnetic reversal between [110]- and [1\bar{1}0]-directions. For both devices, the critical current required to depin a domain wall from an etch step is found to be strongly temperature-dependent, and can be described by a power-law dependence on the magnetization (M) with an exponent of 2.6±0.3. The domain wall motion is strongly influenced by the presence of local pinning centres.
Campion R. P.
Edmonds K. W.
Foxon C. T.
Gallagher B. L.
Irvine Andrew C.
No associations
LandOfFree
Magnetic reversal under external field and current-driven domain wall motion in (Ga,Mn)As: influence of extrinsic pinning does not yet have a rating. At this time, there are no reviews or comments for this scientific paper.
If you have personal experience with Magnetic reversal under external field and current-driven domain wall motion in (Ga,Mn)As: influence of extrinsic pinning, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Magnetic reversal under external field and current-driven domain wall motion in (Ga,Mn)As: influence of extrinsic pinning will most certainly appreciate the feedback.
Profile ID: LFWR-SCP-O-1806406