Density dependence of solar emission lines of Si(X) and S(XII)

Details Density dependence of solar emission lines of Si(X) and S(XII) Density dependence of solar emission lines of Si(X) and S(XII)

Dec 1983

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=1983jqsrt..30..537c&link_type=abstract

Journal of Quantitative Spectroscopy and Radiative Transfer (ISSN 0022-4073), vol. 30, Dec. 1983, p. 537-545. Research supported

Physics

1

Electron Density (Concentration), Emission Spectra, Silicon, Solar Electrons, Solar Spectra, Atomic Energy Levels, Atomic Excitations, Emissivity, Equilibrium Equations, Populations

Scientific paper

The author has used the statistical equilibrium equation for the optically thin medium, under steady-state condition, to calculate the relative populations of 15 levels of Si(X) and S(XII) as functions of electron density at the temperature of maximum ion-abundances. The processes taken into account are collisional electron impact and radiative transitions. Proton excitation and deexcitation between the two levels of the ground state have also been accounted for. These populations are used to calculate the emissivities and intensity ratios.

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