Theoretical calculations of the primary defects induced by pions and protons in SiC

Details Theoretical calculations of the primary defects induced by pions and protons in SiC Theoretical calculations of the primary defects induced by pions and protons in SiC

2000-07-06

arxiv.org/abs/physics/0007011v2

Nucl.Instrum.Meth. A485 (2002) 768-773

Physics

Instrumentation and Detectors

9 pages, 2 figures, in press to Nuclear Instruments and Methods in Physics Research A v2 - modified title, and major revisions

Scientific paper

10.1016/S0168-9002(01)02147-7

In the present work, the bulk degradation of SiC in hadron (pion and proton)
fields, in the energy range between 100 MeV and 10 GeV, is characterised
theoretically by means of the concentration of primary defects per unit
fluence. The results are compared to the similar ones corresponding to diamond,
silicon and GaAs.

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