Arc lamp zone melting and recrystallization of Si films on oxidized silicon substrates

Details Arc lamp zone melting and recrystallization of Si films on oxidized silicon substrates Arc lamp zone melting and recrystallization of Si films on oxidized silicon substrates

Nov 1982

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=1982apphl..41..824s&link_type=abstract

Applied Physics Letters, vol. 41, Nov. 1, 1982, p. 824-826. Research supported by the Lockheed Missiles and Space Co.;

Physics

23

Recrystallization, Silicon Films, Silicon Oxides, Substrates, Zone Melting, Arc Lamps, Grain Boundaries, High Pressure, Mercury Arcs, Microstructure, Polycrystals, Semiconducting Films, Thin Films

Scientific paper

A high pressure mercury arc lamp focused into a narrow ribbon beam has been used to recrystallize thin films of polysilicon deposited on thermally grown silicon dioxide. The recrystallized films contain grains that are typically 0.5-1 mm in width and several centimeters long. Surface texture measurements show the crystallites to be almost entirely (100) in the plane of the film with the orthogonal (100) direction closely paralleling the scan direction.

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