AlGaN-based laser diodes for the short-wavelength ultraviolet region

Physics

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Scientific paper

We have demonstrated the room-temperature operation of GaN/AlGaN and indium-free AlGaN multiple-quantum-well (MQW) laser diodes under the pulsed-current mode. We have successfully grown low-dislocation-density AlGaN films with AlN mole fractions of 20 and 30% on sapphire substrates using the hetero-facet-controlled epitaxial lateral overgrowth (hetero-FACELO) method. GaN/AlGaN and AlGaN MQW laser diodes have been fabricated on the low-dislocation-density Al0.2Ga0.8N and Al0.3Ga0.7N films, respectively. The GaN/AlGaN MQW laser diodes lased at a peak wavelength ranging between 359.6 and 354.4 nm. A threshold current density of 8 kA cm-2, an output power as high as 80 mW and a differential external quantum efficiency (DEQE) of 17.4% have been achieved. The AlGaN MQW laser diodes lased at a peak wavelength down to 336.0 nm far beyond the GaN band gap. For the GaN/AlGaN MQW laser diodes, the modal gain coefficient and the optical internal loss are estimated to be 4.7±0.6 cm kA-1 and 10.6±2.7 cm-1, respectively. We have observed that the characteristic temperature T0 ranges from 132 to 89 K and DEQE shows an almost stable tendency with increase of temperature. A temperature coefficient of 0.049 nm K-1 is also found for the GaN/AlGaN MQW laser diode. The results for the AlGaN-based laser diodes grown on high-quality AlGaN films presented here will be essential for the future development of laser diodes emitting much shorter wavelengths.

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