Physics
Scientific paper
Apr 2008
adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=2008stt..conf..425c&link_type=abstract
Proceedings of the Ninteenth International Symposium on Space Terahertz Technology, held April 28-30, 2008, in Groningen. Edited
Physics
Scientific paper
Increasing operating frequencies of SIS receivers requires junctions that can operate at higher current densities. A major limiting factor of higher current density junctions is the increase in subgap leakage that occurs in AlOX barriers as current densities approach and exceed 10kA/cm2. AlN insulators are a promising alternative due to their lower leakage current at these high current densities. In this paper we present a more detailed analysis of the formation of AlN barriers using our previously reported inductively coupled plasma (ICP) source growth technique. The ICP allows for independent control of ion energy and current density in the plasma. Additionally, plasmas with very low ion energy (~20eV) and a high degree of dissociation (~80%) can be achieved. This improved control allows for the repeatable formation of high quality barriers. In particular, we report on the relationship between barrier thickness and plasma conditions as determined by in-situ discrete ellipsometry. Ellipsometry results were verified by fabricating Nb/Al-AlN/Nb junctions and measuring current-voltage, I(V), curves. dc I(V) curves for a range of current densities are presented.
Cecil Thomas W.
Kerr Anthony R.
Lichtenberger Arthur W.
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