Band Gap Energies of CdO:F Semiconductor Films Produced by Ultrasonic Spray Pyrolysis Method

Details Band Gap Energies of CdO:F Semiconductor Films Produced by Ultrasonic Spray Pyrolysis Method Band Gap Energies of CdO:F Semiconductor Films Produced by Ultrasonic Spray Pyrolysis Method

Apr 2007

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=2007aipc..899..608i&link_type=abstract

SIXTH INTERNATIONAL CONFERENCE OF THE BALKAN PHYSICAL UNION. AIP Conference Proceedings, Volume 899, pp. 608-608 (2007).

Physics

Semiconductors, Ii-Vi Semiconductors

Scientific paper

The fluorine doped cadmium oxide (CdO:F) samples have been deposited by ultrasonic spray pyrolysis method (USP). The absorption spectra of the samples showed that CdO:F is a direct band gap material. The direct optical transition has shifted towards the shorter wavelengths, and the transparency of the material has increased at a given wavelength above the fundamental absorption edge. The optical band gap (Eg) has found to be 2,28 eV for undoped CdO films. A shift in the absorption edge of the fluorine doped CdO films with increasing fluorine concentration is explained by means of the Moss-Burstein effect.

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