Semiconductor-metal Interface as 1/f Noise Level Regulator

Details Semiconductor-metal Interface as 1/f Noise Level Regulator Semiconductor-metal Interface as 1/f Noise Level Regulator

Apr 2007

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=2007aipc..899..601g&link_type=abstract

SIXTH INTERNATIONAL CONFERENCE OF THE BALKAN PHYSICAL UNION. AIP Conference Proceedings, Volume 899, pp. 601-601 (2007).

Physics

Semiconductor-Metal-Semiconductor Structures, Noise Processes And Phenomena, Electron States At Surfaces And Interfaces

Scientific paper

It is demonstrated that by regulating dynamics of the surface and interface losses of phonons it is possible to regulate 1/f noise level in a semiconductor device. On the base of mobility fluctuations phonon mechanism it is shown, that semiconductor- metal interface can be considered as potential source of reduction and regulation of 1/f-noise level.

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