Structural, Optical and Electrical Properties of Al / SnO2 / p-Si MIS Diodes

Details Structural, Optical and Electrical Properties of Al / SnO2 / p-Si MIS Diodes Structural, Optical and Electrical Properties of Al / SnO2 / p-Si MIS Diodes

Apr 2007

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=2007aipc..899..586t&link_type=abstract

SIXTH INTERNATIONAL CONFERENCE OF THE BALKAN PHYSICAL UNION. AIP Conference Proceedings, Volume 899, pp. 586-586 (2007).

Physics

Semiconductor-Device Characterization, Design, And Modeling, Elemental Semiconductors, X-Ray Diffraction, Elemental Semiconductors And Insulators

Scientific paper

The absorption-wavelength, basis absorption spectrum and the Current-Voltage (I-V) characteristics of Al / SnO2 / p-Si (MIS) Schottky Diodes prepared by means of spray Pyrolysis method have been measured at 300 K. To possess information about the optical properties of Al / SnO2 / p-Si (MIS) Schottky diode optical absorptions, optical transmittance, band-gap and Urbach Parameter were investigated. The diode structures were studied by X-Ray diffraction. X-Ray diffraction studies showed that the crystallite size and prefential growth directions of diode.

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