Temperature Dependent Barrier Characteristics of Pt/n-Si0.76Ge0.24/n-Si Schottky Diodes Based on I-V-T Measurements

Details Temperature Dependent Barrier Characteristics of Pt/n-Si0.76Ge0.24/n-Si Schottky Diodes Based on I-V-T Measurements Temperature Dependent Barrier Characteristics of Pt/n-Si0.76Ge0.24/n-Si Schottky Diodes Based on I-V-T Measurements

Apr 2007

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=2007aipc..899..443e&link_type=abstract

SIXTH INTERNATIONAL CONFERENCE OF THE BALKAN PHYSICAL UNION. AIP Conference Proceedings, Volume 899, pp. 443-444 (2007).

Physics

Surface Double Layers, Schottky Barriers, And Work Functions, Metal-Nonmetal Contacts

Scientific paper

n-type (100) oriented Si0.76Ge0.24 samples used in this work were grown by silicon molecular beam epitaxy (Si-MBE). The formation of Schottky junction is made by deposition Pt on n-Si0.76Ge0.24. The electrical properties of Pt/n-Si0.76Ge0.24/n-Si diodes were studied by current-voltage (I-V) measurements. These measurements have done under different temperatures and Schottky barrier heights have determined. The I-V analysis based on thermionic emission (TE) theory has revealed an abnormal decrease of apparent barrier height and increase of ideality factor at low temperature. The conventional Richardson plot exhibits non-linearity at low temperatures. It demonstrates that these anomalies result due to the barrier height inhomogeneities prevailing at the metal-semiconductor interface. The temperature dependence of the I-V characteristics of the Pt/n-Si0.76Ge0.24/n-Si Schottky barrier diode can be successfully explained on the basis of TE mechanism with a Gaussian distribution of the barrier heights. Furthermore, the value of the Richardson constant found is much closer than that obtained without considering the inhomogeneous barrier height.

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