The Photoluminescence Quenching of Porous Silicon

Details The Photoluminescence Quenching of Porous Silicon The Photoluminescence Quenching of Porous Silicon

Apr 2007

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=2007aipc..899..323k&link_type=abstract

SIXTH INTERNATIONAL CONFERENCE OF THE BALKAN PHYSICAL UNION. AIP Conference Proceedings, Volume 899, pp. 323-324 (2007).

Physics

Porous Materials

Scientific paper

In this study, time-depended photoluminescence (PL) quenching of porous silicon (PS) produced in different solutions by electro-chemical method under UV light was investigated. A two-time-constant exponential function characterizing the quenching of PL intensity was developed and found to be in good agreement with experimental results. Spectra were performed in millisecond intervals since the intensity and wavelength of maximum peak of tile PL spectra were affected by excitation light of PL. It was observed that spectroscopic results of UV and FTIR were coherent and especially Si-O-Si bonds, Si-Hx stretch and deformation bonds in the PL quenching played a crucial role.

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