Physics
Scientific paper
Apr 2007
adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=2007aipc..899..293y&link_type=abstract
SIXTH INTERNATIONAL CONFERENCE OF THE BALKAN PHYSICAL UNION. AIP Conference Proceedings, Volume 899, pp. 293-294 (2007).
Physics
Mobility Edges, Hopping Transport, Nucleation And Growth: Microscopic Aspects, Iii-V Semiconductors, Chemical Vapor Deposition
Scientific paper
Electrical resistivity of InGaN layers grown by metal organic vapor
phase epitaxy has been studied at narrow temperature interval.
Resistivity and Hall effect measurements were carried out as a function
of temperature in the samples. We obtained that there was Mott variable
range hopping mechanism in investigated samples.
Kasap M.
Yildiz Ali
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