Photocurrent Measurements in Operating a-Si:H p-i-n Solar Cells with Different P-Layer Conditions

Details Photocurrent Measurements in Operating a-Si:H p-i-n Solar Cells with Different P-Layer Conditions Photocurrent Measurements in Operating a-Si:H p-i-n Solar Cells with Different P-Layer Conditions

Apr 2007

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=2007aipc..899..259k&link_type=abstract

SIXTH INTERNATIONAL CONFERENCE OF THE BALKAN PHYSICAL UNION. AIP Conference Proceedings, Volume 899, pp. 259-260 (2007).

Physics

Photoelectric Conversion: Solar Cells And Arrays, Photoconduction And Photovoltaic Effects

Scientific paper

I-V characteristics, light intensity- and modulation frequency- dependences, and spectral distributions of photocurrent of three-types of a-Si:H p-i-n devices with different p-layer conditions (baseline, thinner and thicker) have been measured at room temperature. Dc and chopped light from a HeNe laser were used for excitation. From the results, the fill-factor, quantum efficiency, carrier lifetime, and the exponent v in the power-low relationship, Iph ~ Gv between photocurrent and generation rate were obtained and compared under different bias conditions and modulation frequencies. The results were interpreted suitably due to radiation loss and recombination mechanisms.

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