Physics
Scientific paper
Apr 2007
adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=2007aipc..899..249e&link_type=abstract
SIXTH INTERNATIONAL CONFERENCE OF THE BALKAN PHYSICAL UNION. AIP Conference Proceedings, Volume 899, pp. 249-250 (2007).
Physics
Ii-Vi Semiconductors
Scientific paper
Cadmium selenide (CdSe) thin films were deposited by a simple and inexpensive chemical bath deposition (CBD). The films were deposited using cadmium nitrate as a Cd2+ ion source and sodium selenosulfate as a Se2- ion source. The films were characterized by using X-ray diffraction, optical absorption and electrical measurements. The values of the optical band gap energy. Eg, calculated from the absorption spectra, ranged between 1.70 and 1.83 eV. The room temperature resistivity was found to be 12×107Ω-cm. The activation energy is found to be 0.34 eV.
Erat Selma
Metin H.
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