Low-Noise Infrared Detection System with InSb Photodiode for Infrared Astronomy

Details Low-Noise Infrared Detection System with InSb Photodiode for Infrared Astronomy Low-Noise Infrared Detection System with InSb Photodiode for Infrared Astronomy

Oct 1988

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=1988jajap..27l1973m&link_type=abstract

Japanese Journal of Applied Physics, Volume 27, Issue 10, pp. L1973-L1975 (1988).

Physics

8

Scientific paper

We have developed a low-noise infrared detection system for astronomical observations in space. The circuit is a charge integrating amplifier with a newly developed low-capacity In Sb photodiode operated at 4.2 K. The amplifier consists of JFETs operated at 70 K. The readout noise is about 80 electrons for an integration time τ{=}1 sec. The dark current noise is negligible. The noise equivalent power is 2× 10-17 W/\sqrt{Hz} at τ{=}1 sec and lower than 10-17 W/\sqrt{Hz} for τ>10 sec.

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