HgCdTe on SI for hybrid and monolithic FPAs

Details HgCdTe on SI for hybrid and monolithic FPAs HgCdTe on SI for hybrid and monolithic FPAs

Sep 1990

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=1990spie.1308..180z&link_type=abstract

IN: Infrared detectors and focal plane arrays; Proceedings of the Meeting, Orlando, FL, Apr. 18, 19, 1990 (A91-36726 15-35). Bel

Physics

Focal Plane Devices, Infrared Detectors, Integrated Circuits, Mercury Cadmium Tellurides, Silicon, Cost Reduction, Infrared Absorption, Infrared Imagery

Scientific paper

MWIR HgCdTe arrays have been prepared on Si substrates for hybrid FPAs. HgCdTe has also been grown directly on the Si readout for developing monolithic HgCdTe/Si FPAs. CdTe, Al2O3 and Si substrates were included in a 35 parameter model for estimating the cost of both monolithic and hybrid HgCdTe FPAs. The model shows the monolithic approach on large Si substrates to be the preferred approach for reducing HgCdTe FPAs cost.

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