Characteristics of high power GaAlAs laser diodes useful for space application

Details Characteristics of high power GaAlAs laser diodes useful for space application Characteristics of high power GaAlAs laser diodes useful for space application

Oct 1989

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=1989spie.1131..130s&link_type=abstract

IN: Optical space communication; Proceedings of the Meeting, Paris, France, Apr. 24-26, 1989 (A90-38001 16-17). Bellingham, WA,

Physics

Optics

Aluminum Gallium Arsenides, Gallium Arsenide Lasers, High Power Lasers, Quantum Wells, Spaceborne Lasers, Fiber Optics, Functional Design Specifications, Organometallic Compounds, Vapor Deposition

Scientific paper

GaAlAs devices with single quantum well active-region structures, which have been fabricated with MOCVD epitaxial growth techniques, have in such cases as that of a 20-emitter multistripe laser diode demonstrated catastrophic power limits of the order of 8 W in CW operation. The fabrication process for high power-gain guided laser diodes is presented. Structures of the type discussed, consisting of 10 emitters that form a 100-micron aperture, have demonstrated CW operation to power levels of as much as 6 W. Fiber-optic laser bundles of this kind furnish an efficient method for convenient aperture size and geometry changes.

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