Physics
Scientific paper
Oct 1989
adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=1989spie.1107...78j&link_type=abstract
IN: Infrared detectors, focal plane arrays, and imaging sensors; Proceedings of the Meeting, Orlando, FL, Mar. 30, 31, 1989 (A90
Physics
Bipolar Transistors, Cryogenic Temperature, Focal Plane Devices, Jfet, Signal Processing, Volt-Ampere Characteristics, Cmos, Metal Oxide Semiconductors, Pixels
Scientific paper
Recent research results in cryogenic bipolar technology which potentially can reduce 1/f noise and threshold variation at least an order of magnitude from the current CMOS technology are presented. Silicon junction field effect transistors (JFETs) have been operated down to liquid-helium temperature. This is explained by a phenomenon newly observed in small-geometry JFETs. Silicon bipolar devices have been operated down to 40 K with current gain higher than 500. These device technologies have three application area: (1) low-noise input circuits; (2) input circuits for low-impedance detectors such as mercury cadmin telluride (HgCdTe) photoconductors; and (3) interface circuits for superconducting devices which normally have low-input impedances. The results presented in this paper show the potential for very low-noise, high-density cryogenic bipolar circuits for on-focal-plane signal processing.
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