X-ray Measurements of Thin Films and Multilayers

Details X-ray Measurements of Thin Films and Multilayers X-ray Measurements of Thin Films and Multilayers

Apr 2002

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=2002aps..apr.u7004m&link_type=abstract

American Physical Society, April Meeting, Jointly Sponsored with the High Energy Astrophysics Division (HEAD) of the American As

Astronomy and Astrophysics

Astrophysics

Scientific paper

Thin film thickness, density and interfacial roughness are parameters that are critical to the performance of conducting and dielectric layers in semiconductor devices. Sensitive and accurate measurement of such properties are needed in the process development phase as well as in subsequent manufacturing practice. X-ray reflectivity represents a nearly ideal tool for generating structural information from thin film structures that are of interest to the semiconductor industry. In contrast with optical analytical techniques, X-rays are characterized by short wavelengths (typically 0.8 Åto 8.0 Åversus 2000 Åto 8000 Åfor optical probes) and small refractive indices (|n- 1| << 0.0001 versus |n- 1| ~ 0.3 to 0.8 for light). These properties make the interaction of X-rays with solids follow what Richard Deslattes called "the Goldilocks principal": not too strong, not too weak, but just right. This talk will review some of the contributions made by Richard Deslattes to the analysis of complex thin materials systems. Although the primary emphasis will be on experimental studies of technologically important materials (e.g. metals such as Cu, Ta/Cu, Ta and W, TaNx and WNx diffusion barriers, and high-k materials such as Ta_2O_5, ZrO2 and HfO_2), we will also discuss Delattes' contributions to the analysis of X-ray reflectivity via a wavelet-based approach.

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