Reliability of oxides at low temperatures

Details Reliability of oxides at low temperatures Reliability of oxides at low temperatures

Jun 1994

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=1994spie.2226..180v&link_type=abstract

Proc. SPIE Vol. 2226, p. 180-186, Infrared Readout Electronics II, Eric R. Fossum; Ed.

Physics

Scientific paper

The increased interest in cryogenic semiconductors and new cryogenic processes that operate at 40 K has prompted the development of a tester to analyze low temperature reliability physics. This tester is particularly suited to study hot electron (hot e-) effects at LN(subscript 2) temperatures but also capable of performing time dependent dielectric breakdown studies. The objective of this work was to study hot electron effects at low temperatures and its activation energy over a large temperature range for conventional thermal oxides in the 150 to 200 angstroms range. It has been shown over the last several years that low temperature operation can significantly enhance the hot electron degradation of a transistor.

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