Current stress metastability in a-Si:H thin film transistors

Details Current stress metastability in a-Si:H thin film transistors Current stress metastability in a-Si:H thin film transistors

Oct 2004

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=2004spie.5578..343s&link_type=abstract

Photonics North 2004: Optical Components and Devices. Edited by Armitage, John C.; Fafard, Simon; Lessard, Roger A.; Lampropoul

Physics

Scientific paper

In this paper, we investigate the threshold voltage (VT) instability in a-Si:H TFTs subject to constant current stress. The gate voltage under such conditions continuously adjusts to keep the drain current constant. As such, existing voltage stress models fail to predict the resulting VT-shift. We propose a physically based model to predict VT-shift under current stress. The model follows a power law assuming that the VT-shift under moderate current stress is due to defect state creation in a-Si:H bulk and interfaces. Good agreement between simulation results and experimental data is obtained for various levels (2μA-15μA) of stress current at both room and elevated (75°C) temperatures.

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