Dynamic saturation in semiconductor optical amplifiers: accurate model, role of carrier density, and slow light

Details Dynamic saturation in semiconductor optical amplifiers: accurate model, role of carrier density, and slow light Dynamic saturation in semiconductor optical amplifiers: accurate model, role of carrier density, and slow light

2009-10-21

arxiv.org/abs/0910.4064v2

OPTICS EXPRESS Vol. 18, No. 2 p685-693 (2010)

Physics

Optics

9 pages, 5 figures

Scientific paper

10.1364/OE.18.000685

We developed an improved model in order to predict the RF behavior and the slow light properties of the SOA valid for any experimental conditions. It takes into account the dynamic saturation of the SOA, which can be fully characterized by a simple measurement, and only relies on material fitting parameters, independent of the optical intensity and the injected current. The present model is validated by showing a good agreement with experiments for small and large modulation indices.

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