Structural evolution in strained In0.18Ga0.82As stacking multilayers on vicinal GaAs surfaces

Details Structural evolution in strained In0.18Ga0.82As stacking multilayers on vicinal GaAs surfaces Structural evolution in strained In0.18Ga0.82As stacking multilayers on vicinal GaAs surfaces

Oct 2006

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=2006njph....8..233y&link_type=abstract

New Journal of Physics, Volume 8, Issue 10, pp. 233 (2006).

Physics

1

Scientific paper

Strain relaxation mechanisms for the growth of m-layers of In0.18Ga0.82As/GaAs on a GaAs(100) substrate, tilted 2° towards the [0 11] direction, have been studied by molecular beam epitaxy (MBE) and atomic force microscopy (AFM). While dislocations alone provide a strain relaxation mechanism for nominal GaAs(100), additional strain relaxation mechanisms were observed for a vicinal GaAs(100) substrate. For m <= 8, step bunching provided a mechanism for strain relaxation. For m >=10, in addition to the step bunching, bunched corners along two [051] and [0 1 5] directions provided the mechanism for strain relaxation. These surface patterns provide potential to act as a template for the growth of more uniform and organized nanostructures. For m = 16, the formation of dislocations provided an additional route for strain relaxation.

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