Determination of the carrier collection efficiency function of Si photodiode using spectral sensitivity measurements

Details Determination of the carrier collection efficiency function of Si photodiode using spectral sensitivity measurements Determination of the carrier collection efficiency function of Si photodiode using spectral sensitivity measurements

Jun 2004

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=2004spie.5353...12g&link_type=abstract

Semiconductor Photodetectors. Edited by Linden, Kurt J.; Dereniak, Eustace L. Proceedings of the SPIE, Volume 5353, pp. 12-1

Physics

Optics

1

Scientific paper

We present the results of our studies of the quantum efficiency of Si photodiode close to the bandgap and some factors influencing Si photodiode sensitivity. To calculate the carrier collection efficiency function P(x), we used a corrected, explicit expression that takes into account the rear surface reflection of the light [1]. The method of calculation involves solution of the integral equation and allows determination of the carrier collection efficiency function with a high precision. We show that the exact integral equation for P(x) could be often, but not always replaced with the approximations similar to those proposed previously in [2,3]. However, employing the method proposed in this work allows quantifying such factors as e.g. the reflectance of the rear surface of the die and optical scattering within the diffusion layer, which is vital in designing highly efficient Si photodiodes in the near infrared spectral range. 1. C. Hicks, M. Kalatsky, R.A. Metzler, and A.O. Goushcha. Applied Optics, Vol. 42, No. 22. In press 2. L. Werner, J. Fischer, U. Johannsen and J. Hartmann, Metrologia 37, 279-284 (2000). 3. T.R. Gentile, J.M. Houston, and C.L. Cromer, Appl. Opt. 35, 4392-4403 (1996).

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