Gamma noise in CCDs

Physics

Scientific paper

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Charge Coupled Devices, Gamma Rays, Ionizing Radiation, Noise Generators, Radiation Effects, Signal Processing, Electromagnetic Noise, Field Effect Transistors, Infrared Detectors, Metal Oxide Semiconductors, Radiation Hardening, Readout, Real Time Operation, Remote Sensors, Signal Detection

Scientific paper

The effects of ionizing radiation on charge coupled devices (CCDs) were investigated. The overall results indicated that CCDs used to read out detector signals or as signal processing electronics in future space sensors can operate real time in a high ionising radiation environment. CCD devices employed to read out detector signals can be made capable of handling radiation induced excess noise and high false alarm rates generated in the detector elements. Ionizing radiation effects induced in the detectors are expected to dominate those generated directly in the CCD readout structure to a degree dependent on the relative size of the detector. The low frequency gamma induced excess noise measured in the CCD/MOS-FET structure could cause problems for space sensors required to operate in real time only at the very high gamma flux levels. Gamma pulses measured at the CCD ERO output were distributed in amplitude and exhibited variable pulse widths.

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