Physics
Scientific paper
Apr 1993
adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=1993jemat..22..365w&link_type=abstract
Journal of Electronic Materials, Volume 22, Issue 4, pp.365-373
Physics
3
Scientific paper
The growth of photochemical native oxides on x = 0.3 bulk wafers of n-type Hg1-xCdxTe has been studied with relation to growth temperature, gas flow rate, oxidizing ambient, and the wavelengths of ultraviolet radiation needed to drive the process. The growth was found to proceed with a relationship of thickness ∝ (time)1/3 for both O2 and N2O ambients. An observed inverse relationship between thickness, and both growth temperature and gas flow rate, indicates a growth process that is either competing with parasitic quenching of the excited oxidizing species produced, or a diffusion controlled process, in which different growth conditions produce oxides with a variety of diffusion characteristics. The physical and optical properties of the photochemical oxides were found to be similar to anodic oxides. Rutherford backscattering spectra have shown the composition of the films to be highly dependent on growth conditions with films grown in O2 ambients generally showing a higher mercury content than those grown in N2O. Further, for growths in O2 atmospheres, those carried out at lower temperatures result in more mercury in the oxide and at the oxide/mercury cadmium telluride interface when compared to those grown at higher temperatures.
Faraone Lorenzo
Hotchkis A. C. M.
Prasad Kamakshi
Winton G. H.
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