Physics
Scientific paper
Oct 1993
adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=1993spie.1946...33s&link_type=abstract
Proc. SPIE Vol. 1946, p. 33-45, Infrared Detectors and Instrumentation, Albert M. Fowler; Ed.
Physics
Scientific paper
We are investigating trapping/recombination centers in near-infrared (1 - 5 micrometers ) InSb imaging arrays via experimentation and theoretical modeling. The presence of impurities, lattice defects and/or surface states can compromise the operational qualities of an imaging array by introducing latent images, signal rate/quantum efficiency loss at low signal levels, and by increasing noise and dark current. Identification of these trapping centers should enable a reduction in their number density by appropriate changes in the material processing and fabrication steps. We have performed experiments and analyses on both gate-controlled arrays (SiO(subscript x) surface passivation) and recently received gateless arrays (Si(subscript 3)N(subscript 4) surface passivation). All of the gated arrays showed latent images at temperatures 6 - 26 K for signal fluxes as low as 1500 e(superscript -)/s/pixel, while neither of the two gateless arrays examined has shown latent images in the same temperature range; no latent image was detected (to a level of < 50 e(superscript -)) in a 5 second integration after exposure to a 2 X 10(superscript 6) e(superscript -)/sec/pixel signal flux. We interpret this as evidence for surface state charge trapping in the region of the gate oxide, which is largely eliminated by the new passivation. The physics of surface states is investigated theoretically in order to gain an understanding of the surface contribution to the observed behavior, and a model is presented to explain the experimental results.
Chen Hao
Garnett James D.
Solomon Steven L.
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