STIS CCD Hot Pixel Annealing

Details STIS CCD Hot Pixel Annealing STIS CCD Hot Pixel Annealing

Jul 2008

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=2008hst..prop11849w&link_type=abstract

HST Proposal ID #11849. Cycle 17

Physics

Scientific paper

This purpose of this activity is to repair radiation induced hot pixel damage to the STIS CCD by warming the CCD to the ambient instrument temperature and annealing radiation damaged pixels. Radiation damage creates hot pixels in the STIS CCD Detector. Many of these hot pixels can be repaired by warming the CCD from its normal operating temperature near -83 C to the ambient instrument temperature { +5 C} for several hours. The number of hot pixels repaired is a function of annealing temperature. The effectiveness of the CCD hot pixel annealing process is assessed by measuring the dark current behavior before and after annealing and by searching for any window contamination effects.;

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