Two-Dimensional Device Simulator VENUS-2D/B for Amorphous Silicon Thin-Film Transistors Using a Gap-State Model

Details Two-Dimensional Device Simulator VENUS-2D/B for Amorphous Silicon Thin-Film Transistors Using a Gap-State Model Two-Dimensional Device Simulator VENUS-2D/B for Amorphous Silicon Thin-Film Transistors Using a Gap-State Model

Feb 1991

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=1991jajap..30l.145i&link_type=abstract

Japanese Journal of Applied Physics, Volume 30, Issue 2A, pp. L145-L148 (1991).

Physics

2

Scientific paper

A two-dimensional device simulator VENUS-2D/B for amorphous silicon thin-film transistors has been developed. For the efficient numerical simulation of amorphous silicon devices, the trapped electron density in the band gap is modeled by the combination of exponential functions. The current-voltage characteristics of an inverted-gate hydrogenerated amorphous silicon thin-film transistor were simulated by VENUS-2D/B.

Affiliated with

Also associated with

No associations

Rating

Two-Dimensional Device Simulator VENUS-2D/B for Amorphous Silicon Thin-Film Transistors Using a Gap-State Model does not yet have a rating. At this time, there are no reviews or comments for this scientific paper.

If you have personal experience with Two-Dimensional Device Simulator VENUS-2D/B for Amorphous Silicon Thin-Film Transistors Using a Gap-State Model, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Two-Dimensional Device Simulator VENUS-2D/B for Amorphous Silicon Thin-Film Transistors Using a Gap-State Model will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFWR-SCP-O-1317335